Physics Electronics PMDC Conceptual Practice
PMDC Verified Question 342 of 494
When an external reverse bias voltage is applied across a \( \text{P-N} \) junction diode, the depletion layer:
A
Disappears completely due to majority carrier recombination
B
Narrows significantly, reducing junction dynamic resistance
C
Remains unchanged in physical dimensions and internal field strength
D
Widens and provides a substantially higher barrier resistance to current
Tap any option to test your recall and reveal the step-by-step Propolis autopsy.

Propolis Cognitive Error Autopsy

Official Correct Choice:
Option D: Widens and provides a substantially higher barrier resistance to current
Concept:

Under reverse bias, the applied electric field acts in the same direction as the built-in electric field of the junction.

Formula:

$$E_{\text{net}} = E_{\text{built-in}} + E_{\text{applied}}$$

Solution:

  • The positive terminal attracts free electrons in the N-region away from the junction.


  • The negative terminal attracts holes in the P-region away from the junction.


  • This exposes additional immobile donor and acceptor ions, widening the depletion region and creating high electrical resistance.


Why other options are incorrect:

  • Option A: The depletion layer expands rather than disappearing during reverse bias.
  • Option B: Thinning of the depletion region is the characteristic behavior of forward bias.
  • Option C: The depletion region's width and internal electric field increase proportionally with reverse bias voltage up to breakdown.

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