Concept:A reverse-biased \( \text{P-N} \) junction functions as a parallel-plate capacitor (transition or space-charge capacitance), where the neutral P and N regions serve as conducting plates separated by the insulating depletion layer.
Formula:$$C_j = \frac{\varepsilon A}{W} \quad \text{where} \quad W \propto \sqrt{V_B + V_R} \implies C_j \propto \frac{1}{\sqrt{V_B + V_R}}$$
Solution:- Increasing the reverse bias voltage \( V_R \) widens the depletion width \( W \).
- Because capacitance is inversely proportional to plate separation (\( C = \frac{\varepsilon A}{W} \)), junction capacitance \( C_j \) decreases as \( V_R \) increases.
- This voltage-variable capacitance property is utilized in varactor (varicap) diodes.
Why other options are incorrect:- Option A: Capacitance decreases rather than increasing because the plate separation (depletion width) expands.
- Option B: Capacitance varies with applied voltage; it is not constant.
- Option D: The capacitance remains non-zero for all reverse voltages below breakdown.
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