Physics Electronics PMDC Conceptual Practice
PMDC Verified Question 59 of 494
In a practical reverse-biased silicon \( \text{P-N} \) junction diode, the reverse leakage current before breakdown is typically on the order of:
A
Amperes (\( \text{A} \))
B
Milliamperes (\( \text{mA} \))
C
Microamperes (\( \mu\text{A} \)) to nanoamperes (\( \text{nA} \))
D
Kiloamperes (\( \text{kA} \))
Tap any option to test your recall and reveal the step-by-step Propolis autopsy.

Propolis Cognitive Error Autopsy

Official Correct Choice:
Option C: Microamperes (\( \mu\text{A} \)) to nanoamperes (\( \text{nA} \))
Concept:

The reverse saturation current is caused by thermally generated minority carriers swept across the junction by the internal field.

Formula:

$$I_0 \propto T^3 e^{-E_g / k_B T} \quad (\text{order of } \mu\text{A for Ge, nA for Si})$$

Solution:

  • Because minority carrier density at room temperature is extremely low, the reverse leakage current is minute, typically \( \mu\text{A} \) for Germanium and \( \text{nA} \) to \( \mu\text{A} \) for Silicon.


Why other options are incorrect:

  • Option A: Amperes represent massive macroscopic power currents.


  • Option B: Milliamperes represent normal forward-bias conduction currents in standard diodes.


  • Option D: Kiloamperes represent industrial-scale short-circuit fault currents.

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